High?Performance Large?Scale Vertical 1T'/2H Homojunction CVD?Grown Polycrystalline MoTe ₂ Transistors

2D transition metal dichalcogenides (TMDs) have emerged as an ideal alternative to silicon in advanced electronics. Especially, MoTe2 attracts peculiar attention since it offers a unique opportunity of resolving critical electrical contacts. Currently, although MoTe2-based coplanar semiconductor-metal circuitry realized by epitaxial growth and chemical assembly has been demonstrated, while still suffers from the requirement extremely accurate synthesis process control. Here, facile strategy is demonstrated fabricate large scale high performance transistors with 1T'/2H vertical homojunction structure combining spatial phase controlled scalable universal transfer method water-soluble poly-vinylpyrrolidone poly-(vinyl alcohol) bilayer mediator. Both quality 1T'- 2H- dimensions can be synthesized via shadow mask assisted vapor deposition method. These as-synthesized patterns successfully transferred wide range substrates at yield >80% well-retained properties construct complex 1T'/2H-MoTe2/HfAlO2 structure. The devices exhibit on/off current ratio surpassing 104 typical mobility ?29 cm2 V?1 s?1. developed scaled both feasible way for potential large-scale